HIGH BARRIER METALLIC POLYMER P-TYPE SILICON SCHOTTKY DIODES

A metallic polypyrrole film has been formed on a p-type Si substrate b y means of an anodization process. An investigation of the formed poly mer/pSi Schottky diodes has been made. The polypyrrole polymer provide s a good rectifying contact to the p-Si semiconductor. The current-vol tage (barrier height Phi(b0) = 0.84 eV) and capacitance-voltage (Phi(b 0) = 0.94 eV) characteristics of the devices are significantly improve d with increasing Omega(b0) and decreasing the ideality factor (n - 1. 20) after a polymer melt processing step. These values of Phi(b0) are significantly larger than those of conventional Schottky diodes. Furth ermore this study shows that owing to its room temperature processing the high barrier-metallic polypyrrole/pSi structures can be useful for deep level characterisation of p-Si.