UNIFIED PHYSICAL I-V MODEL OF FULLY DEPLETED SOI MOSFETS FOR ANALOG-DIGITAL CIRCUIT SIMULATION/

An improved physical I-V model for fully depleted SOI/MOSFETs with cha nnel lengths down to deep submicrometer range is presented. The model contains the following advanced features: precise description of the s ubthreshold, near-threshold and above-threshold regimes of operation u sing one single expression; precise description of I-V and G-V charact eristics in the saturation region; continuous and smooth transition of the drain current and conductance from the linear to the saturation r egime; extrinsic model expressions for devices with parasitic drain an d source series resistances; inclusion of important short channel effe cts accounting for velocity saturation, drain induced barrier lowering (DIBL) and drain induced conductivity enhancement (DICE), channel len gth modulation (CLM), as well as the gate bias dependent mobility; a d escription of the floating body effect associated with drain breakdown . Inclusion of these features greatly improves the accuracy as well as the convergence properties and the calculating efficiency when using the model in;circuit simulators. The present model agrees well with ex perimental results for a wide range of process and device parameters.