THE CHILD-LANGMUIR LAW AS A MODEL FOR ELECTRON-TRANSPORT IN SEMICONDUCTORS

Authors
BENABDALLAH N DEGOND P YAMNAHAKKI A
Citation
N. Benabdallah et al., THE CHILD-LANGMUIR LAW AS A MODEL FOR ELECTRON-TRANSPORT IN SEMICONDUCTORS, Solid-state electronics, 39(5), 1996, pp. 737-744
Citations number
23
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
39
Issue
5
Year of publication
1996
Pages
737 - 744
Database
ISI
SICI code
0038-1101(1996)39:5<737:TCLAAM>2.0.ZU;2-#
Abstract
A model for space-charge limited electron transport in an N+-N-N+ devi ce and a Schottky diode is proposed. It is based on the smallness of t he lattice temperature with respect to the applied voltage. This model , derived from the stationary Boltzmann equation of semiconductors, ha s a much lower computational cost and leads to a good prediction for t he I-V curve as well as for the built-in potential.