IMPURITY-INDUCED DISORDERING OF ALGAINAS QUANTUM-WELLS BY LOW-TEMPERATURE ZN DIFFUSION

We investigated impurity-induced disordering (IID) in AlGaInAs multi-q uantum wells (MQWs) on InP substrate by Zn diffusion under low tempera ture conditions. Blue-shift of band-gap energy of lattice-matched AlGa InAs MQW on InP strongly depended on the temperature of Zn diffusion. The lattice-matched MQW was not completely disordered below 500 degree s C. On the other hand, photoluminescence spectra from compressively s trained AlGaInAs MQW, after disordering was independent of the tempera ture of Zn diffusion. Considerable disordering was observed in the str ained MQW, which was saturated even at the low temperature of 400 degr ees C, The measured hole concentration of the Zn diffused layer at 400 degrees C was as low as 3 x 10(18) cm(-3) The IID lasers were also fa bricated and characterized. No significant increase in the optical los s due to the Zn diffusion was observed in these lasers.