PHOTOCONDUCTIVITY AND PHOTOLUMINESCENCE STUDIES IN COPPER DIFFUSED INP

Cu diffusion was carried out in p-InP at 300 degrees C for one hour fo llowed by 600 degrees C for one minute. High photoconductivity (I-ph/I -d 2.6 x 10(5) at 200K) was observed in this sample. Information about Cu related deep levels was obtained from dark conductivity, photocond uctivity and its spectral response. A Cu related photoluminescence (PL ) band was observed at 1.216 eV and its line-shape and line-width anal ysis carried out. The configuration coordinate diagram of the band was calculated and showed small lattice relaxation. In n-InP Cu diffusion at 650 degrees C for two hours resulted in two PL bands at 1.20 and 1 .01 eV. The former was similar to the 1.216 eV band in p-InP. The PL o f the 1.01 eV band was also studied in detail and the corresponding co nfiguration coordinate diagram derived. The parameters of the Cu relat ed bands obtained from the line-shape and line-width analysis are comp ared with those reported due to Mn and Fe in InP.