RAMAN-SCATTERING STUDY OF THE IMMISCIBLE REGION IN INGAASP GROWN BY LPE ON (100)GAAS AND (111)GAAS

Authors
SUGIURA T HASE N HIRAMATSU K SAWAKI N
Citation
T. Sugiura et al., RAMAN-SCATTERING STUDY OF THE IMMISCIBLE REGION IN INGAASP GROWN BY LPE ON (100)GAAS AND (111)GAAS, Journal of electronic materials, 25(4), 1996, pp. 695-699
Citations number
23
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
25
Issue
4
Year of publication
1996
Pages
695 - 699
Database
ISI
SICI code
0361-5235(1996)25:4<695:RSOTIR>2.0.ZU;2-V
Abstract
We have studied the asymmetric broadening of the Raman spectra of In G a1-xAsyP1-y grown on GaAs substrates by means of the spatial correlati on model. The broadening phenomena was found to be enhanced in the reg ion of immiscibility, in agreement with PL observations. In Raman meas urements, the broadening is more enhanced in the samples grown on (100 ) substrates than in the samples grown on (111) substrates. The enhanc ement is attributed to the immiscibility included in the samples grown on (100) substrate.