Strain has been measured within (001) oriented OMVPE grown multilayer
superlattices consisting of thin As-compound layers in InP and thin P-
compound layers in GaAs. From the strain behavior, it is interpreted t
hat As rapidly replaces P on an InP surface exposed to AsH3 and P slow
ly replaces As on a As-terminated surface exposed to PH,. This results
in incorporation of an InAs-like strain in InP whose magnitude depend
s on the nature of the As-terminated surface. At growth temperatures a
bove 600 degrees C, the strain is equivalent to about one monolayer of
InAs; while below 600 degrees C, it is equivalent to two monolayers o
f InAs. PH3 interaction with GaAs surfaces is sufficiently slow that G
aP-like strain is observed only when deliberate interrupts under PH3 a
re introduced. GaP grown on GaAs at 650 degrees C is found to incorpor
ate enough residual As to sustain a layer composition of GaAs5P5 over
the first several monolayers.