HIGHLY CONFINED 2-DIMENSIONAL ELECTRON-GAS IN AN IN0.52AL0.48AS IN0.53GA0.47AS MODULATION-DOPED STRUCTURE WITH A STRAINED INAS QUANTUM-WELL/

This paper examines a detailed analysis by Shubnikov-de Haas measureme nts of the effective mass of two-dimensinal electron gas (2DEG) in an In0.52Al0.48As/In0.53Ga0.47As modulation-doped (MD) structure with an InAs quantum well inserted into the InGaAs channel (InAs-inserted chan nel). The measured effective mass of 2DEG in the InAs-inserted-channel MD structure is in good agreement with the calculated one of the stra ined InAs layer on In0.53Ga0.47As. This indicates that almost all of t he 2DEG forms in the strained InAs quantum well. These results show th at the InAs-inserted-channel MD structure improves the electron confin ement, since the BDEG is confined in the InAs quantum well with the th ickness of 4 nm.