EFFECT OF THE POST-AS-IMPLANTATION THERMAL-TREATMENT ON MBE HGCDTE OPTICAL-PROPERTIES()

Authors
GUO SP CHANG Y ZHANG JM SHEN XC CHU JH YUAN SX
Citation
Sp. Guo et al., EFFECT OF THE POST-AS-IMPLANTATION THERMAL-TREATMENT ON MBE HGCDTE OPTICAL-PROPERTIES(), Journal of electronic materials, 25(4), 1996, pp. 761-764
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
25
Issue
4
Year of publication
1996
Pages
761 - 764
Database
ISI
SICI code
0361-5235(1996)25:4<761:EOTPTO>2.0.ZU;2-#
Abstract
HgCdTe epilayers were grown by molecular beam epitaxy. A series of As-implanted CdTe and HgCdTe epilayers annealed under different temperat ures were investigated by photoluminescence spectroscopy. More As+ ion s can occupy the Te sublattice after the samples were annealed at 450 degrees C, and the acceptor level of As+ on the Te sublattice for HgCd Te material (x approximate to 0.39) is 31.5 meV. The Raman spectrum st udy indicates a recovery of the crystalline perfection after the post- As+-implantation thermal treatment.