THE STRAIN-ENERGY DENSITY OF CUBIC EPITAXIAL LAYERS

Citation
Dj. Bottomley et P. Fons, THE STRAIN-ENERGY DENSITY OF CUBIC EPITAXIAL LAYERS, Journal of crystal growth, 160(3-4), 1996, pp. 406-412
Citations number
28
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
160
Issue
3-4
Year of publication
1996
Pages
406 - 412
Database
ISI
SICI code
0022-0248(1996)160:3-4<406:TSDOCE>2.0.ZU;2-S
Abstract
We obtain a compact exact expression for the strain energy density of a cubic epitaxial medium in the limit of linear elasticity theory. Onl y the result for {001} is identical to the isotropic case: the greates t departure from isotropic theory occurs for {111}. We have evaluated this difference for a large number of cubic media and have obtained an estimate of its impact on epilayer critical thickness t(c) for [001] oriented growth. We suggest that it tends to lower t(c) for [001] orie nted growth relative to that given by isotropic theory: by 15%-30% for common semiconductors and by up to a factor of 3 for metals.