COMPOSITION, STOICHIOMETRY AND GROWTH-RATE CONTROL IN MOLECULAR-BEAM EPITAXY OF ZNSE BASED TERNARY AND QUATERNARY ALLOYS

This paper presents an original thermodynamic description of (Mg,Zn)(S ,Se) MBE growth, which is in a good quantitative agreement with experi mental data. This approach provides large flexibility in choosing diff erent growth regimes of pseudomorphic ZnSe-based heterostructures to o btain desirable alloy composition, surface stoichiometry, and growth r ate. The possibility to control a nearly lattice-matched to GaAs compo sition of a Zn1-xMgxSySe1-y alloy from (x=0, y=0.09) to (x=0.07, y=0.1 3) only by variation of the Mg flux intensity has been theoretically r evealed and experimentally realized in an optically pumped ZnMgSSe/ZnS Se/ZnCdSe SQW SCH laser structure with a threshold power density of 20 kW/cm(2) at 300 K.