HETEROEPITAXY OF CDTE ON (211)SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY

Direct growth of (211)CdTe on Si has been achieved by molecular beam e pitaxy, We adopted techniques for substrate preparation that do not re quire heating above 540 degrees C. Si surfaces treated with As were fo und to produce the best nucleation. A growth schedule, interrupted mul ti-layer anneal cycle, was used to improve the crystal quality of the epilayer. Single domain and good surface morphology were produced,Valu es for full width at half maximum of the (422)CdTe X-ray reflection we re as low as 106 arcsec. Transmission electron microscopy has shown th e advantages of the IMAC process on the confinement of the growth defe cts near the interface.