MOVPE GROWTH OF ZINCBLENDE MAGNESIUM SULFIDE

Authors
KONCZEWICZ L BIGENWALD P CLOITRE T CHIBANE M RICOU R TESTUD P BRIOT O AULOMBARD RL
Citation
L. Konczewicz et al., MOVPE GROWTH OF ZINCBLENDE MAGNESIUM SULFIDE, Journal of crystal growth, 159(1-4), 1996, pp. 117-120
Citations number
10
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
159
Issue
1-4
Year of publication
1996
Pages
117 - 120
Database
ISI
SICI code
0022-0248(1996)159:1-4<117:MGOZMS>2.0.ZU;2-7
Abstract
The successful growth of MgS epitaxial layers with the MOVPE technique is reported. The samples were grown on GaAs substrates in a classical horizontal reactor, using bis(methylcyclopentadienyl) magnesium and H 2S as precursors. The zincblende structure of MgS layers is evidenced by careful X-ray diffraction analysis. The lattice constant is found t o be about 5.66 Angstrom. The influence of the growth temperature on t he morphology and quality of the layers is studied in detail.