GROWTH OF P-TYPE ZNSE BY METALORGANIC VAPOR-PHASE EPITAXY USING ETHYLAZIDE AS A NEW NITROGEN-SOURCE

The growth of nitrogen-doped ZnSe epilayers has been investigated by m etalorganic vapor phase epitaxy (MOVPE) using ethylazide as a novel do pant source in which no N-H bonds are involved. Nitrogen was successfu lly incorporated in the ZnSe epilayers, whereas hydrogen was also foun d in the epilayers, primarily in the form of N-H bonds. By thermally a nnealing the samples, we have found that N-H bonds can be dissociated, yielding p-type ZnSe layers with hole concentrations of mid-10(17) cm (-3).