OPTIMIZATION OF THE STRUCTURAL AND OPTICAL-PROPERTIES OF ZNS EPILAYERS GROWN ON (100)GAAS BY MOVPE

Authors
LEO G LOVERGINE N PRETE P LONGO M CINGOLANI R MANCINI AM ROMANATO F DRIGO AV
Citation
G. Leo et al., OPTIMIZATION OF THE STRUCTURAL AND OPTICAL-PROPERTIES OF ZNS EPILAYERS GROWN ON (100)GAAS BY MOVPE, Journal of crystal growth, 159(1-4), 1996, pp. 144-147
Citations number
9
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
159
Issue
1-4
Year of publication
1996
Pages
144 - 147
Database
ISI
SICI code
0022-0248(1996)159:1-4<144:OOTSAO>2.0.ZU;2-F
Abstract
The crystalline and optical quality of ZnS epilayers grown on (100)GaA s by MOVPE was investigated by channeling-RBS, 10 K photoluminescence and absorption spectroscopy for different growth conditions. The measu rements point out that the crystalline and optical quality of the epil ayers strongly depends on the VI/II precursor vapor phase stoichiometr y as well as on GaAs surface treatments before the growth. Optimized M OVPE growth conditions have been determined.