INVESTIGATION OF THE TRANSITION RANGE IN SEEDED VAPOR-GROWN ZNSE CRYSTALS

Prerequisite for the growth of large area single crystals are exactly (111)Se orientated seeds. For both used growth methods, seeded physica l vapour transport (SPVT) and seeded chemical vapour transport (SCVT), an improved crystal quality can be achieved. In SCVT crystals, optica lly active deep level (DL) defects dominate mainly due to the self act ivated (SA)-centre. The transition range width was more than three tim es that of SPVT material, but in the bulk the concentration of linear defects is lower. Strong exciton luminescence and decreasing DL emissi on were found in the bulk of SPVT crystals. The decision what method s hould be used for optimal substrate performance has to be drawn after manufacturing light emitting devices by epitaxial methods.