GROWTH AND CHARACTERIZATION OF THE TERNARY ZNSE-BASED COMPOUNDS OBTAINED BY LOW-TEMPERATURE VAPOR TRANSPORT

Authors
MYCIELSKI A KOWALCZYK L WITKOWSKA B
Citation
A. Mycielski et al., GROWTH AND CHARACTERIZATION OF THE TERNARY ZNSE-BASED COMPOUNDS OBTAINED BY LOW-TEMPERATURE VAPOR TRANSPORT, Journal of crystal growth, 159(1-4), 1996, pp. 191-194
Citations number
8
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
159
Issue
1-4
Year of publication
1996
Pages
191 - 194
Database
ISI
SICI code
0022-0248(1996)159:1-4<191:GACOTT>2.0.ZU;2-B
Abstract
We employed the low temperature physical vapour transport (PVT) method to grow ZnSe and ZnSe1-xSx (x less than or equal to 0.15), high quali ty, large (25 mm in diameter) bulk crystals. Characterization of the o btained crystals was performed by means of X-ray diffraction, X-ray fu ll width half maximum (FWHM) rocking curves and the energy dispersive X-ray fluorescence (EDXRF) spectrometry. Optical properties were deter mined from the low temperature near-band-edge photoluminescence and re flection measurements.