Layers of ZnO have been deposited onto glass substrates by ''photo-ass
isted'' spray pyrolysis using zinc chloride and zinc acetate as precur
sors in aqueous and non-aqueous solutions. The structure of these film
s has been shown by reflection high energy electron diffraction (RHEED
) to be hexagonal, the crystallites exhibiting a pronounced preferred
orientation with their (0002) planes lying parallel to the substrate.
The transmission properties of layers deposited using an aqueous solut
ion of zinc acetate were found to be superior. In their as-deposited f
orm the films repeatedly exhibited carrier concentration, Hall mobilit
y and resistivity values of similar to (1-2) X 10(17) cm(-3), similar
to 0.1-0.2 cm(2) V-1 s(-1) and similar to 150-600 Ohm . cm respectivel
y. However, following annealing at 400 degrees C for 15 min in forming
gas (H-2 + N-2), these parameters improved to similar to 5 X 10(19) c
m(-3), similar to 29 cm(2) V-1 s(-1) and similar to 1.5 X 10(-2) Ohm .
cm respectively. Annealing did not change the transmittance but there
was a noticeable improvement in the degree of preferred orientation.
The considerable improvement in the electrical properties after anneal
ing can be largely attributed to the increases in carrier concentratio
n and mobility due to the change in stoichiometry and possibly a reduc
tion in inter-granular potential barriers respectively.