COMPENSATING PROCESSES IN NITROGEN DELTA-DOPED ZNSE LAYERS STUDIED BYPHOTOLUMINESCENCE AND PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY

The compensating accepters and donors in nitrogen delta-doped ZnSe epi layers grown by molecular beam epitaxy using a nitrogen rf-plasma sour ce are studied by means of photoluminescence and photoluminescence exc itation spectroscopy. A deep acceptor and a deep donor with ionization energies of similar to 170 and similar to 88 meV are reported for the nitrogen delta-doped layers. These Mo deep centres are assigned to N- clusters, i.e., N-Se-Zn-N-Se for the deep acceptor and N-Se-N-Zn for t he deep donor.