REAL-TIME MONITORING OF GROWTH AND P-TYPE DOPING PROCESSES IN MOVPE OF ZNSE

Growth and p-type doping processes in MOVPE of ZnSe have been studied by optical probing methods called RD (reflectance difference) and SPI (surface photo-interference). As for the dopant source, tertiarybutyl- amine (tBNH(2)) was extensively used in this work, because it is one o f the most useful dopant sources in photo-assisted MOVPE of widegap II -VI compounds. Oscillations with monolayer periodicity in RD signal tr aces have been successfully detected for the first time using a He-Ne laser beam in MOVPE of ZnSe. One of the most important findings is tha t tBNH(2) molecules are selectively adsorbed on the ''Zn-terminated'' surface and not on the ''Se-terminated'' surface; this suggests that s elective doping during Zn-source (DMZn) supply and/or on Zn-terminated surfaces will be effective for improving the doping efficiency.