RAMAN-SPECTROSCOPY AND SELECTIVE PAIR LUMINESCENCE ON ZNSE-N

Raman spectroscopy and selective pair luminescence were used to invest igate the compensation processes in ZnSe:N. The most important shallow donor; could be identified, the existence of a deeper donor, which do minates the compensation at high doping levels, could be verified and an estimation of its ionisation energy is given (E(D)(d) approximate t o 43 meV). The shift and broadening of the longitudinal optical phonon due to the coupling to the free hole gas permits one to investigate t he carrier concentration and mobility by Raman spectroscopy. Their dep endence on temperature as well as on nitrogen concentration is display ed.