A. Hoffmann et al., STRAIN-DEPENDENT ZEEMAN-EFFECT OF THE NITROGEN ACCEPTOR-BOUND EXCITONIN ZNSE-EPILAYERS, Journal of crystal growth, 159(1-4), 1996, pp. 302-306
We report on high resolution magneto-optical studies of the exciton bo
und to the neutral nitrogen acceptor in freestanding strain-free and s
trained ZnSe epilayers. The Zeeman results for absorption and photolum
inescence are discussed in terms of the j-j coupling scheme in cubic s
ymmetry including Zeeman and strain terms. It is shown that the bound-
exciton state from the two hole J=0 state is below the bound-exciton s
tates from the J=2 two-hole state. A diamagnetic shift of 5.6 mu eV/T-
2 is found. The g-value of the acceptor ground state is 0.7. The g-val
ue of the bound-exciton state from the J=0 two-hole state is 1.35 repr
esenting the electron g-value. The g-value of the bound exciton from t
he J=2 two-hole state is 0.9.