STRAIN-DEPENDENT ZEEMAN-EFFECT OF THE NITROGEN ACCEPTOR-BOUND EXCITONIN ZNSE-EPILAYERS

Citation
A. Hoffmann et al., STRAIN-DEPENDENT ZEEMAN-EFFECT OF THE NITROGEN ACCEPTOR-BOUND EXCITONIN ZNSE-EPILAYERS, Journal of crystal growth, 159(1-4), 1996, pp. 302-306
Citations number
11
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
159
Issue
1-4
Year of publication
1996
Pages
302 - 306
Database
ISI
SICI code
0022-0248(1996)159:1-4<302:SZOTNA>2.0.ZU;2-L
Abstract
We report on high resolution magneto-optical studies of the exciton bo und to the neutral nitrogen acceptor in freestanding strain-free and s trained ZnSe epilayers. The Zeeman results for absorption and photolum inescence are discussed in terms of the j-j coupling scheme in cubic s ymmetry including Zeeman and strain terms. It is shown that the bound- exciton state from the two hole J=0 state is below the bound-exciton s tates from the J=2 two-hole state. A diamagnetic shift of 5.6 mu eV/T- 2 is found. The g-value of the acceptor ground state is 0.7. The g-val ue of the bound-exciton state from the J=0 two-hole state is 1.35 repr esenting the electron g-value. The g-value of the bound exciton from t he J=2 two-hole state is 0.9.