PHOTOLUMINESCENCE EXCITATION SPECTROSCOPIC STUDIES OF NITROGEN-DOPED ZNSE

Authors
BROWNLIE GD ZHU Z HORSBURGH G STEELE T THOMPSON PJ WALLACE JM PRIOR KA CAVENETT BC
Citation
Gd. Brownlie et al., PHOTOLUMINESCENCE EXCITATION SPECTROSCOPIC STUDIES OF NITROGEN-DOPED ZNSE, Journal of crystal growth, 159(1-4), 1996, pp. 321-324
Citations number
13
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
159
Issue
1-4
Year of publication
1996
Pages
321 - 324
Database
ISI
SICI code
0022-0248(1996)159:1-4<321:PESSON>2.0.ZU;2-4
Abstract
Photoluminescence excitation spectroscopy (PLE) of nitrogen doped ZnSe epilayers is reported here for the first time. The dependence of the PLE spectra on the net acceptor concentration in ZnSe:N and the temper ature has been investigated. A new radiative transition at 2.732 eV is revealed in highly doped ZnSe:N, and is attributed to a transition be tween the valence band and a new donor level with an ionisation energy of 88 meV. The effect of strain on the exciton spectra in undoped and N-doped layers is discussed.