NITROGEN-DOPED ZNSE(100) FILMS GROWN BY MOLECULAR-BEAM EPITAXY USING A CAPACITIVELY COUPLED PLASMA-CELL

We have tried nitrogen doping to ZnSe using a capacitively coupled RF plasma cell. The plasma was very stable throughout the doping experime nt. The net acceptor concentration (N-a - N-d) showed a dip with incre asing the nitrogen supply to the cell. The highest N-a - N-d obtained was as high as 6 X 10(17) cm(-3). This value seems to be limited by th e pumping ability of our system. In the photoluminescence spectra, dee p DA pair emissions were dominantly observed in almost all the samples . In the plasma emission spectra, the emissions of N-2 radicals were c learly observed, but those of excited N atoms were not observed. The r elation between N-a - N-d and the plasma emissions is discussed.