DX CENTERS IN CDZNTE-CL AND THEIR APPLICATIONS

Citation
T. Thio et al., DX CENTERS IN CDZNTE-CL AND THEIR APPLICATIONS, Journal of crystal growth, 159(1-4), 1996, pp. 345-349
Citations number
15
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
159
Issue
1-4
Year of publication
1996
Pages
345 - 349
Database
ISI
SICI code
0022-0248(1996)159:1-4<345:DCICAT>2.0.ZU;2-T
Abstract
DX centres, far from being undesirable defects, can be very useful: th e persistent photoconductivity (PPC) associated with them makes it pos sible to optically write erasable metallic patterns in an insulating b ackground; potential applications include optical switching and hologr aphy. In order to develop room-temperature devices, we study II-VI sem iconductors in search of DX centres which can support PPC to 300 K. Me asurements of the PC and Hall effect in Cl-doped Cd1-xZnxTe show that Cl donors form two distinct DX states. Only one is apparent for x = 0. 20, but for x = 0.28 the transport measurements evince an additional D X-like state into which the photocarriers are metastably captured. In the latter, the PPC persists to 190 K.