COMPLEX-FORMATION AT INDIUM DONORS IN P-CDTE

Citation
U. Reislohner et al., COMPLEX-FORMATION AT INDIUM DONORS IN P-CDTE, Journal of crystal growth, 159(1-4), 1996, pp. 372-375
Citations number
15
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
159
Issue
1-4
Year of publication
1996
Pages
372 - 375
Database
ISI
SICI code
0022-0248(1996)159:1-4<372:CAIDIP>2.0.ZU;2-V
Abstract
After diffusion of silver into p-CdTe at room temperature, two electri c field gradients (EFG) are observed at In-111/Cd-111 probe atoms at T = 77 K: nu(Q1) = 61 MHz, eta(1) = 0.15 and nu(Q2) = 30 MHz, eta(2) = 0.46. The assignment of EFG(1) to In-A centers leads to the conclusion that the 0/ - level of the Cd-vacancy is located deeper in the band g ap than the shallow doping and that the two EFGs are caused by the neu tral and singly negative Cd-vacancy. The reason for In-A center format ion and subsequent dissociation (aging) after Ag diffusion is explaine d.