ON THE GROWTH-MECHANISM OF LI-DOPED AND NA-DOPED ZN CHALCOGENIDES ON GAAS(001) BY MEANS OF MOLECULAR-BEAM EPITAXY

Authors
OHISHI M YONETA M ISHII S OHURA M HIROE Y SAITO H
Citation
M. Ohishi et al., ON THE GROWTH-MECHANISM OF LI-DOPED AND NA-DOPED ZN CHALCOGENIDES ON GAAS(001) BY MEANS OF MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 159(1-4), 1996, pp. 376-379
Citations number
4
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
159
Issue
1-4
Year of publication
1996
Pages
376 - 379
Database
ISI
SICI code
0022-0248(1996)159:1-4<376:OTGOLA>2.0.ZU;2-6
Abstract
Sharp and semicircular patterns were observed in RHEED during the MBE growth of Li- or Na-acceptor doped ZnSe and ZnS on GaAs(001). The radi us and the separation between the diffraction circles vary with the ch ange of the azimuth of the incident electron beam. Calculated diffract ion patterns assuming that Li or Na atoms are arrayed one-dimensionall y along the [110] direction of the crystal axis are in good agreement with the experimental results. We conclude that Li or Na atoms are inc orporated at the [110] terrace steps, which prevents the further growt h from the step edge.