PHOTOLUMINESCENCE OF CDZNSE ZNSE QUANTUM-WELL STRUCTURES FABRICATED BY REACTIVE ION ETCHING/

Authors
STRAUB H BRUNTHALER G FASCHINGER W BAUER G VIEU C
Citation
H. Straub et al., PHOTOLUMINESCENCE OF CDZNSE ZNSE QUANTUM-WELL STRUCTURES FABRICATED BY REACTIVE ION ETCHING/, Journal of crystal growth, 159(1-4), 1996, pp. 451-454
Citations number
12
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
159
Issue
1-4
Year of publication
1996
Pages
451 - 454
Database
ISI
SICI code
0022-0248(1996)159:1-4<451:POCZQS>2.0.ZU;2-G
Abstract
Wire and dot patterns of CdZnSe/ZnSe quantum wells have been fabricate d by a methane(CH4)/hydrogen(H-2) reactive ion etching technique. The structures exhibit photoluminescence emission down to the smallest wid ths of 40 and 60 nm, respectively. The wider wires and dots of about 2 00-1000 nm show even an increase of the normalized photoluminescence i ntensity for the emission line in CdZnSe/ZnSe as compared to the unetc hed quantum well structure, For the smallest structures a decrease of the red shift is observed.