PIEZOELECTRIC EFFECT IN ZNSE ZNCDSE QUANTUM-WELLS GROWN ON (211)B GAAS/

Authors
WANG SY THOMPSON PJ HORSBURGH G STEELE TA BROWNLIE GD PRIOR KA CAVENETT BC
Citation
Sy. Wang et al., PIEZOELECTRIC EFFECT IN ZNSE ZNCDSE QUANTUM-WELLS GROWN ON (211)B GAAS/, Journal of crystal growth, 159(1-4), 1996, pp. 459-462
Citations number
9
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
159
Issue
1-4
Year of publication
1996
Pages
459 - 462
Database
ISI
SICI code
0022-0248(1996)159:1-4<459:PEIZZQ>2.0.ZU;2-T
Abstract
The piezoelectric effect has been demonstrated for the first time in s trained ZnSe/ZnCdSe quantum wells grown on (211)B GaAs substrate. A pi ezoelectric field strength of 1.1 x 10(5) V/cm has been observed in Zn 0.8Cd0.2Se quantum wells that have a 1.3% lattice mismatch with the su bstrate.