QUANTUM-CONFINED FRANZ-KELDYSH EFFECT IN (ZNCDSE) (ZNSES) QUANTUM-WELL LASER-DIODES/

Citation
Aa. Toropov et al., QUANTUM-CONFINED FRANZ-KELDYSH EFFECT IN (ZNCDSE) (ZNSES) QUANTUM-WELL LASER-DIODES/, Journal of crystal growth, 159(1-4), 1996, pp. 463-466
Citations number
7
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
159
Issue
1-4
Year of publication
1996
Pages
463 - 466
Database
ISI
SICI code
0022-0248(1996)159:1-4<463:QFEI((>2.0.ZU;2-F
Abstract
The room-temperature electro-absorption in wide (similar to 150 Angstr om) ZnCdSe quantum wells is explained in terms of the quantum-confined Franz-Keldysh effect. The heavy hole-light hole splitting has been de termined both for single quantum well (SQW) and multiple quantum well heterostructures, providing an insight into the distribution of intrin sic strain. The band gap shrinkage due to the many-body Coulomb intera ctions is shown to be negligible in the SQW laser diode with the wide quantum well.