OPTICAL AND ELECTRICAL-PROPERTIES OF NEW CARRIER BARRIER LAYER STRUCTURE OF II-VI COMPOUNDS

A new carrier barrier layer structure of II-VI compounds, which is ZnS e/MgS strained-layer superlattice (SLS), was proposed and ZnSe/MgS SLS s have been successfully grown by molecular beam epitaxy (MBE) for the first time. The ZnSe/MgS SLSs showed photoluminescence (PL) due to th e transition of electrons between the quantized levels. The current-vo ltage characteristics for p-type SLSs indicated the possibility of the hole transport through miniband. From the theoretical and experimenta l results, ZnSe/MgS SLSs are thought to be a promising material as a c arrier barrier layer.