We have used a combination of techniques to characterize low defect de
nsity (less than or equal to 10(5) cm(-2)) blue-green separate confine
ment heterostructure lasers. The limits of lattice mismatch between th
e substrate and quaternary cladding layers that result in a pseudomorp
hic laser structure were determined by X-ray diffraction and transmiss
ion electron microscopy to be less than or equal to 0.0015. The determ
ination of defect density (stacking faults, threading dislocations, et
c.) in the active layer was performed by optical imaging. Photolumines
cence imaging is nicely suited for defect observation, because of the
nonradiative transitions associated with the defects and can easily be
performed over large areas. Propagation of defects during device oper
ation (device degradation) was monitored in real time with optical ima
ging. The degradation was observed to start at grown-in defect sites (
in the active layer) that emanate from [100] dark line defects. From t
he direct observation of device degradation, a mechanism involving the
creation of new defects from nonradiative recombination at existing d
efects sites is proposed.