A STUDY OF INTERNAL LOSSES IN CDZNSE ZNSE MULTIPLE-QUANTUM-WELL MATERIALS/

Authors
DONEGAN JF JORDAN C REES P LOGUE F HEFFERNAN JF HEGARTY J
Citation
Jf. Donegan et al., A STUDY OF INTERNAL LOSSES IN CDZNSE ZNSE MULTIPLE-QUANTUM-WELL MATERIALS/, Journal of crystal growth, 159(1-4), 1996, pp. 653-656
Citations number
9
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
159
Issue
1-4
Year of publication
1996
Pages
653 - 656
Database
ISI
SICI code
0022-0248(1996)159:1-4<653:ASOILI>2.0.ZU;2-F
Abstract
We have carried out measurements of the internal-losses in a multiple quantum well laser of Cd0.28Zr0.72Se/ZnSe. From the dependence of the slope efficiency as a function of cavity length the loss value obtaine d for the 40 Angstrom well width with 5 wells in the sample is 50 cm(- 1). This very large value is attributed mainly to absorption in the Ga As substrate on which the quantum wells were grown. This measurement s hows the importance of using waveguide structures in order to obtain l ow threshold conditions in II-VI lasers.