BLEACHING OF EXCITONIC ABSORPTION IN II-VI LASER-DIODES UNDER LASING CONDITIONS

Citation
A. Diessel et al., BLEACHING OF EXCITONIC ABSORPTION IN II-VI LASER-DIODES UNDER LASING CONDITIONS, Journal of crystal growth, 159(1-4), 1996, pp. 661-666
Citations number
22
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
159
Issue
1-4
Year of publication
1996
Pages
661 - 666
Database
ISI
SICI code
0022-0248(1996)159:1-4<661:BOEAII>2.0.ZU;2-P
Abstract
The lasing mechanism for II-VI laser diodes is studied with a novel pu mp-and-probe scheme that allows for probing the absorption spectrum un der actual lasing conditions, For high quality samples containing a 10 nm Zn1-xCdxSe single quantum well, the exciton is bleached for carrie r densities in the gain/lasing range in accordance with numerical solu tions of the semiconductor Bloch equations. Furthermore, emission spec tra are obtained for a sample within a cavity resonator, and the resul ts are in qualitative agreement with results obtained from a non-equil ibrium Green's functions theory for the coupled carriers and photons s ystem.