Mb. Veron et al., RECONSTRUCTION AND STOICHIOMETRY OF CDTE(001) SURFACES - A GRAZING-INCIDENCE X-RAY-DIFFRACTION AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY, Journal of crystal growth, 159(1-4), 1996, pp. 694-702
We present X-ray diffraction measurements on the CdTe(001) surface. In
-plane and out-of-plane scattering were used to solve the structure of
the c(2 X 2) surface. The basic structural unit consists in two Cd at
oms bounded to Te in an almost flat ''bridge model'' giving a coverage
of 0.5 ML Cd. This arrangement is followed by a strong relaxation of
the underlying substrate down to the sixth atomic layer. This model is
in full agreement with the first principles calculations for the ZnSe
c(2 X 2) structure. A strong anisotropy of the reconstructed domain d
imensions was observed, for the surfaces formed above 280 degrees C. F
or the low temperature (2 X 1) Te surface, a new method has been appli
ed to determine the surface stoichiometry. This method is based on the
variation of the specular beam intensity in reflection high energy el
ectron diffraction (RHEED) during the homoepitaxial growth, combined w
ith the results obtained for the relaxation in highly strained CdTe/Zn
Te structures grown by atomic layer epitaxy. The coverage of the (2 X
1) Te surface was estimated to be 1.5 ML.