RECONSTRUCTION AND STOICHIOMETRY OF CDTE(001) SURFACES - A GRAZING-INCIDENCE X-RAY-DIFFRACTION AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY

Citation
Mb. Veron et al., RECONSTRUCTION AND STOICHIOMETRY OF CDTE(001) SURFACES - A GRAZING-INCIDENCE X-RAY-DIFFRACTION AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY, Journal of crystal growth, 159(1-4), 1996, pp. 694-702
Citations number
25
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
159
Issue
1-4
Year of publication
1996
Pages
694 - 702
Database
ISI
SICI code
0022-0248(1996)159:1-4<694:RASOCS>2.0.ZU;2-X
Abstract
We present X-ray diffraction measurements on the CdTe(001) surface. In -plane and out-of-plane scattering were used to solve the structure of the c(2 X 2) surface. The basic structural unit consists in two Cd at oms bounded to Te in an almost flat ''bridge model'' giving a coverage of 0.5 ML Cd. This arrangement is followed by a strong relaxation of the underlying substrate down to the sixth atomic layer. This model is in full agreement with the first principles calculations for the ZnSe c(2 X 2) structure. A strong anisotropy of the reconstructed domain d imensions was observed, for the surfaces formed above 280 degrees C. F or the low temperature (2 X 1) Te surface, a new method has been appli ed to determine the surface stoichiometry. This method is based on the variation of the specular beam intensity in reflection high energy el ectron diffraction (RHEED) during the homoepitaxial growth, combined w ith the results obtained for the relaxation in highly strained CdTe/Zn Te structures grown by atomic layer epitaxy. The coverage of the (2 X 1) Te surface was estimated to be 1.5 ML.