STRUCTURAL-PROPERTIES OF ZNSE GAAS(100) HETEROSTRUCTURES WITH ENGINEERED BAND OFFSETS/

The band discontinuities in ZnSe-GaAs(100) heterostructures grown by m olecular beam epitaxy depend on the local interface composition, We us ed a thin (20 Angstrom thick) composition control layer fabricated at the interface in Zn-rich or Se-rich conditions to control the band off sets for heterostructures in which the bulk of the II-VI epilayer was fabricated in stoichiometric growth conditions. Here we focus on the r esulting variations in atomic interdiffusion across the interface, and on the local and long-range structural properties of the II-VI epilay er.