AES ANALYSIS OF PLASMA-ETCHED ZNSE

ZnSe epilayers were grown on GaAs by molecular beam epitaxy. The sampl es were etched by reactive ion etching in various mixtures of CH4 and H-2. The samples were measured by Auger electron spectroscopy (AES) an d depth profiling. We found, that the variation of the ratio of CH4 an d H-2 has great influence on the chemical composition of the samples. For a CH4:H-2 ratio of 1:7 we found the lowest Se-depletion. Using a r atio containing more CH4 we observed clearly incorporation of C into t he sample. For a composition containing less CH4 an enlargement of the Se depletion and oxygen incorporation was detected.