REDUCTION OF P-ZNTE P-ZNSE VALENCE-BAND DISCONTINUITY BY A GA2SE3 INTERFACIAL LAYER/

The defect zincblende structure Ga2Se3 was inserted at the interface o f ZnSe and ZnTe so that the valence band discontinuity (Delta E(v)) co uld be modified. The valence band discontinuity was determined from th e capacitance-voltage (C-V) measurement technique. The measured Delta E(v) depended on the thickness of the Ga2Se3 interfacial layer. The di scontinuity became negligible when the thickness of the interfacial la yer was about 4 Angstrom. The current-voltage (I-V) characteristics fo r the Au/p-ZnTe/Ga2Se3/p-ZnSe/p-GaAs structure exhibited a perfectly l inear plot when the thickness of the interfacial layer was about 8 Ang strom. These results suggest that the valence band discontinuity betwe en ZnTe and ZnSe can be reduced by introducing the Ga2Se3 interfacial layer.