CHI((3)) NONLINEAR SUSCEPTIBILITY IN II-VI COMPOUNDS AND APPLICATIONSFOR SQUEEZED-LIGHT GENERATION IN SEMICONDUCTORS

Citation
Am. Fox et al., CHI((3)) NONLINEAR SUSCEPTIBILITY IN II-VI COMPOUNDS AND APPLICATIONSFOR SQUEEZED-LIGHT GENERATION IN SEMICONDUCTORS, Journal of crystal growth, 159(1-4), 1996, pp. 771-775
Citations number
14
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
159
Issue
1-4
Year of publication
1996
Pages
771 - 775
Database
ISI
SICI code
0022-0248(1996)159:1-4<771:CNSIIC>2.0.ZU;2-3
Abstract
We have measured the nonlinear refractive index near half-bandgap (E(g )/2) in ZnS and ZnSe by self-phase modulation experiments. The ratio o f the nonlinear phase shift and the total optical absorption losses is critically dependent on the detuning from E(g)/2. Efficient quadratur e squeezing was obtained at a centre wavelength of 780 nm in ZnS and a t 960 nm in ZnSe. The scheme we employed can generally be applied to s emiconductors, and opens the way for squeezed light generation over a wide range of wavelengths.