ELECTRON-TUNNELING IN CDTE CDMNTE DOUBLE-BARRIER STRUCTURES/

Citation
N. Cain et al., ELECTRON-TUNNELING IN CDTE CDMNTE DOUBLE-BARRIER STRUCTURES/, Journal of crystal growth, 159(1-4), 1996, pp. 818-821
Citations number
7
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
159
Issue
1-4
Year of publication
1996
Pages
818 - 821
Database
ISI
SICI code
0022-0248(1996)159:1-4<818:EICCDS>2.0.ZU;2-H
Abstract
Pump and probe nonlinear transmission experiments with femtosecond res olution are used to investigate electron tunnelling between the centra l CdMnTe well and the outer CdTe wells of a CdTe/CdMnTe double barrier structure. The time dependence of the reduction in oscillator strengt h resulting from bandfilling at the exciton resonance is used to measu re population changes in the outer wells. A tunnelling time of 8 ps is measured when a carrier density of 1 x 10(13) cm(-2) is used. Monte C arlo simulations show that the timescale of tunnelling via LO phonon s cattering is 10 ps. A pump induced increase in absorption at energies smaller than that of the exciton resonance is observed at early times and assigned to band-gap renormalisation.