PICOSECOND PHOTOLUMINESCENCE PROPERTIES OF CDTE-ZNTE SUPERLATTICES PREPARED BY HOT-WALL EPITAXY

Authors
KUWABARA H ASAI H TATSUOKA H NAKAMURA T NAKANISHI Y FUJIYASU H
Citation
H. Kuwabara et al., PICOSECOND PHOTOLUMINESCENCE PROPERTIES OF CDTE-ZNTE SUPERLATTICES PREPARED BY HOT-WALL EPITAXY, Journal of crystal growth, 159(1-4), 1996, pp. 839-842
Citations number
10
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
159
Issue
1-4
Year of publication
1996
Pages
839 - 842
Database
ISI
SICI code
0022-0248(1996)159:1-4<839:PPPOCS>2.0.ZU;2-4
Abstract
CdTe/ZnTe strained-layer superlattices (SLSs) are grown on GaAs substr ates by hot-wall epitaxy (HWE). SLSs are studied by X-ray diffraction, photoluminescence (PL) and transmission electron microscopy (TEM). Cr oss sectional TEM image of SLSs shows that the critical thickness of t he CdTe well layer is about 9-12 Angstrom. Picosecond time-resolved PL spectra reveal that the exciton luminescence bands in SLS are origina ting from both free and bound exciton recombination. Dynamical process es of photo-excited carrier relaxation and annihilation in CdTe/ZnTe a re discussed.