GIANT STATIC ELECTRIC-FIELD IN PHOTO-DARKENED CDSXSE1-X SEMICONDUCTOR-DOPED GLASSES

The giant static electric field generated in II-VI semiconductor doped glasses during the photo-darkening process is studied through the tim e-resolved measurement of Bragg diffraction efficiency of the refracti ve index gratings photo-induced in the material. This technique allows a precise determination of the photo-darkening fluence threshold. Res ults obtained in samples of different compositions demonstrate the int rinsic behaviour of this photo-darkening effect and show that this pro cess originates more likely from the Auger effect which occurs at high write fluences. The annihilation of the static electric field of ioni zed dots by extra electron-hole pairs is also demonstrated unambiguous ly.