De. Ashenford et al., INVESTIGATION OF P-I-N SOLAR-CELL EFFICIENCY ENHANCEMENT BY USE OF MQW STRUCTURES IN THE I-REGION, Journal of crystal growth, 159(1-4), 1996, pp. 920-924
The effects of CdTe quantum wells in CdMnTe Schottky junctions and p-i
-n structures have been explored with a view to determining the improv
ements in photovoltaic energy conversion efficiency which might be ach
ieved in such devices. Spectral response measurements have demonstrate
d (i) that the presence of the wells successfully extends the range of
absorbed photons to lower energies and (ii) that, under normal ambien
t temperature conditions, the photostimulated carriers have a high pro
bability of escaping from the wells, thereby contributing to the photo
generated current. Measurements at lower temperatures have indicated a
reduced quantum efficiency, consistent with theoretical prediction as
suming carrier escape from the wells to be a predominantly thermally a
ctivated process.