MAGNETIC-FIELD-INDUCED TRANSITIONS IN DILUTED MAGNETIC SEMICONDUCTOR QUANTUM-WELLS

The purpose of this paper is to present a detailed theoretical study o f the behaviour of excitonic transitions which are forbidden in a zero magnetic field but whose oscillator strength increases with the appli ed field. The calculation utilizes a two parameter excitonic wave func tion which permits the relative motion term to assume the symmetry of either a prolate or an oblate spheroid should it be energetically favo urable to do so. In addition the effect of the coulombic interaction o f the electron and hole is treated in a self-consistent manner and the calculation includes enhanced paramagnetic effects at the interface. A detailed study is given of experimental observations [Ribayrol et al ., Phys. Rev. B 51 (1995) 7882] in which the behaviour of the e1-hh3 t ransition is explained in terms of a magnetic field induced type-I-typ e-II transition in a diluted magnetic semiconductor quantum well syste m.