INFLUENCE OF THE BARRIER HEIGHTS ON VERTICAL TRANSPORT IN CDTE CDMNTESUPERLATTICES/

Citation
P. Chen et al., INFLUENCE OF THE BARRIER HEIGHTS ON VERTICAL TRANSPORT IN CDTE CDMNTESUPERLATTICES/, Journal of crystal growth, 159(1-4), 1996, pp. 1066-1069
Citations number
14
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
159
Issue
1-4
Year of publication
1996
Pages
1066 - 1069
Database
ISI
SICI code
0022-0248(1996)159:1-4<1066:IOTBHO>2.0.ZU;2-T
Abstract
Vertical transport in CdTe/Cd1-xMnxTe superlattices has been studied b y an all-optical method. The diffusion lengths of carriers in 40/40 An gstrom and 50/50 Angstrom superlattices at 2 K are found to be 0.21 an d 0.11 mu m, respectively. At temperatures below 20 K, the transport o ccurs by the hopping of excitons between localized states. At higher t emperatures, the excitons are activated into extended states so that t he transport efficiency increases. In an external magnetic field the v ertical transport increases because of a reduction in the barrier heig ht of the heavy hole.