ELECTRICAL MEASUREMENTS OF HG1-XMNXTE FILMS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

Preliminary electrical measurements of mercury manganese telluride (MM T) films, grown by metalorganic vapour phase epitaxy (MOVPE), are repo rted. The epitaxial films were grown on insulating (100)GaAs substrate s with a buffer layer of ZnTe and CdTe by the interdiffused multilayer process (IMP). Electrical transport measurements were made on samples of x = 0.05-0.08 and x = 0.08-0.11, at magnetic fields of up to 0.38 T, and for the temperature range of 20-300 K, It is demonstrated that both n- and p-type epilayers may be produced depending upon growth con ditions, with extrinsic electron and hole concentrations of order 10(1 5) and 10(14) cm(-3), respectively.