DETERMINATION OF THE MIGRATION ENERGY OF HG INTERSTITIALS IN (HGCD)TEFROM ION MILLING EXPERIMENTS

Authors
BELAS E GRILL R FRANC J TOTH A HOSCHL P SITTER H MORAVEC P
Citation
E. Belas et al., DETERMINATION OF THE MIGRATION ENERGY OF HG INTERSTITIALS IN (HGCD)TEFROM ION MILLING EXPERIMENTS, Journal of crystal growth, 159(1-4), 1996, pp. 1117-1122
Citations number
13
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
159
Issue
1-4
Year of publication
1996
Pages
1117 - 1122
Database
ISI
SICI code
0022-0248(1996)159:1-4<1117:DOTMEO>2.0.ZU;2-H
Abstract
The influence of temperature on processes occurring during and after i on beam milling with low energy Ar ions (500-1000 eV) on Hg1-xCdxTe sa mples (x approximate to 0.2) was demonstrated. Nearly exponential depe ndence of the depth of the p-n junction created during ion milling on temperature in the range 77-300 K was found, Theoretical fits based on the presented model yield a migration energy of the mercury interstit ials of E(M) = 120 +/- 30 meV.