TEMPERATURE-DEPENDENT INVESTIGATION OF THE HGTE CDTE VALENCE-BAND OFFSET/

Citation
M. Vontruchsess et al., TEMPERATURE-DEPENDENT INVESTIGATION OF THE HGTE CDTE VALENCE-BAND OFFSET/, Journal of crystal growth, 159(1-4), 1996, pp. 1128-1131
Citations number
12
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
159
Issue
1-4
Year of publication
1996
Pages
1128 - 1131
Database
ISI
SICI code
0022-0248(1996)159:1-4<1128:TIOTHC>2.0.ZU;2-W
Abstract
We report here on a temperature dependent magneto-optical investigatio n of the valence band offset between HgTe and CdTe. The H1-E1 gap and the conduction band edge mass of various HgTe-(HgCd)Te superlattices w ere studied in a wide regime from liquid helium to nearly room tempera ture. With an offset of 550 meV which was determined previously at liq uid helium temperatures and the temperature dependence of the Gamma(6) -Gamma(8) gap of bulk Hg1-xCdxTe, a nearly perfect description of the experimental data was obtained. Our experiment provides strong evidenc e that a temperature dependence of the band offset can essentially be neglected.