INVERSE STAGGERED POLY-SI AND AMORPHOUS SI DOUBLE STRUCTURE TFTS FOR LCD PANELS WITH PERIPHERAL DRIVER CIRCUITS INTEGRATION

Authors
AOYAMA T OGAWA K MOCHIZUKI Y KONISHI N
Citation
T. Aoyama et al., INVERSE STAGGERED POLY-SI AND AMORPHOUS SI DOUBLE STRUCTURE TFTS FOR LCD PANELS WITH PERIPHERAL DRIVER CIRCUITS INTEGRATION, I.E.E.E. transactions on electron devices, 43(5), 1996, pp. 701-705
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
43
Issue
5
Year of publication
1996
Pages
701 - 705
Database
ISI
SICI code
0018-9383(1996)43:5<701:ISPAAS>2.0.ZU;2-J
Abstract
Inverse staggered polycrystalline silicon (poly-Si) and hydrogenated a morphous silicon (a-Si:H) double structure thin-film transistors (TFT' s) are fabricated based on the conventional a-Si:H TFT process on a si ngle glass substrate, After depositing a thin (20 nm) a-Si:H using the plasma CVD technique at 300 degrees C, Ar+ and XeCl (300 mJ/cm(2)) la sers are irradiated successively, and then a thick a-Si:H (200 nm) and n(+) Si layers are deposited again. The field effect mobilities of 10 and 0.5 cm (2)/V . s are obtained for the Laser annealed poly-Si and the a-Si:H (without annealing) TFT's, respectively.