DEVICE CHARACTERISTICS OF A 30-V-CLASS THIN-FILM SOI POWER MOSFET

Authors
MATSUMOTO S KIM IJ SAKAI T FUKUMITSU T YACHI T
Citation
S. Matsumoto et al., DEVICE CHARACTERISTICS OF A 30-V-CLASS THIN-FILM SOI POWER MOSFET, I.E.E.E. transactions on electron devices, 43(5), 1996, pp. 746-752
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
43
Issue
5
Year of publication
1996
Pages
746 - 752
Database
ISI
SICI code
0018-9383(1996)43:5<746:DCOA3T>2.0.ZU;2-N
Abstract
A 30-V thin-film SOI power MOSFET having a tungsten polycide gate with a linear gate topology has been fabricated at a practical device leve l, Its electrical characteristics a ere successfully demonstrated for the first time, The experimental device has 1010 unit cells and a tota l gate width of 4.04 cm, It has a specific on-resistance of 99 m Omega . mm(2) and breakdown voltage of 33 V. The device's various parasitic capacitance characteristics were measured and compared with those of a lateral power MOSFET Fabricated on a bulk-silicon substrate.